RESEARCH AREA 4: ELECTRONICS - 4.1 Nano- and Bio-Electronics: Two-Dimensional Material based Synaptic Devices for Neuromorphic Computing
Abstract
Artificial synaptic devices are the fundamental building blocks of neuromorphic computation systems, which has the potential to change the face of many electronic systems for civilian and military applications. The emergence of the layered two-dimensional (2D) atomic crystals with their unique material properties provides new opportunities for developing novel artificial synaptic devices. In this program, we will focus on developing 2D layered materials such as black phosphorus (BP), tin selenide (SnSe), molybdenum disulfide (MoS2) and their integration with graphene to demonstrate synaptic devices with novel functionalities that can transform neuromorphic electronics technology. The goal of the program is to (1) develop novel 2D material based synaptic devices including a reconfigurable FET-type ambipolar synaptic device, a vertical RRAM-type device with hetero-synaptic plasticity, and a vertical stochastic multi-filament device; (2) develop in-depth understanding of 2D material native oxides such as SnOx formed from SnSe and POx formed from BP for RRAM-type synaptic device applications; (3) demonstrate network-level functionalities that can be enabled by these new devices. To achieve these goals, we will: (i) develop the design, fabrication and characterization of both FET-type and RRAM-type synaptic devices based on 2D materials; (ii) develop compact device models for 2D material based FET-type synaptic devices and molecular dynamics simulations for understanding the operation and stochasticity in single- and multiple-filament 2D material memristive devices; and (iii) develop network-level demonstrations through combined experiment and simulation efforts. Our research program will fundamentally advance the neuromorphic electronics technology for civilian and military applications that will contribute to the ArmyÕs mission and technological dominance through the realization of bio-mimetic electronic devices with novel functionalities for neuromorphic computing. The program will lead to applications in critical Army technologies such as sensing, target recognition, surveillance, data acquisition, and information processing. Scientifically, our project provides an ideal platform for the understanding of the material properties, ionic migration properties and filament formation stochasticity in novel 2D materials such as black phosphorus, SnSe, and their oxides. We will also study their tunable filament formation processes subject to modulating electric field biases.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 22, 2017
- Source ID
- W911NF1610435
Entities
People
- Han Wang
Organizations
- Army Contracting Command
- United States Army
- University of Southern California