4.1 Nano- and Bio-Electronics: Strain Engineered Topological Phases of 2D Materials and Their Heterostructures
Abstract
To discover topological insulating phases in strain engineered 2D materials and their heterostructures at room temperature by the use of state of the art high-throughout computational methods for potential applications in nanoelectronics. In order to realize topological properties in 2D materials and their heterostructures, the following main tasks will be carried out: 1. Investigate how strain can lead to topological states in 2D semiconductors. In particular, the PI will investigate how strain can lead to topological states in 2D semiconductors composed of group IV elements and their alloys by using state of the art quantum mechanical calculations; identify functional groups (including different spatial distributions) that can be attached to 2D semiconductors to introduce strain and thus achieve topological states. 2. Predict Quantum anomalous quantum Hall effect in pi-conjugated magnetic 2D materials. In this task, the quantum spin Hall and quantum anomalous Hall topological insulating phases in 2D pi-conjugate structures will be studied in detail at the atomic level using first principles simulations based on density functional theory (DFT). 3. Design novel TIs based on heterostructures of 2D materials. In this task, the PI will investigate the interlayer interactions in vertical heterostructures of 2D materials and identify suitable heterostructure systems that enhance or even boost topological insulating phases.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 12, 2017
- Source ID
- W911NF1610447
Entities
People
- Vivek B Shenoy
Organizations
- Army Contracting Command
- United States Army
- University of Pennsylvania