Molecular Beam Epitaxial Growth and Characterization of Two-Dimensional BN/MoxW1-xSe2 Heterostructures

Abstract

This project is related to the molecular beam epitaxial growth and fundamental structural, electrical, and optical characterization of two-dimensional (2D) BN/WMoTe2/BN heterostructures . The emission wavelengths of monolayer WMoTe2 can be tuned from 1.3 to 1.65 um by varying the alloy compositions, which cover the important optical communication wavelength window. We will also demonstrate, for the first time, the incorporation of2D BN/WMoTe2/BN heterostructures, via van der Waals epitaxy, in III-nitride nanowire p-n junctions on a Si substrate. Work in this project will enable an unprecedented understanding of the exciton kinetics, radiative and nonradiative recombination processes, and other fundamental properties of the emerging 2D TMDC materials, including MoTe2, WTe2, and their alloys.

Document Details

Document Type
DoD Grant Award
Publication Date
Sep 11, 2018
Source ID
W911NF1610582

Entities

People

  • Zetian Mi

Organizations

  • Army Contracting Command
  • United States Army
  • University of Michigan

Tags

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene