Electrically Injected 280 nm AlGaN Nanowire Edge-Emitting Lasers
Abstract
This project is related to the development of AIGaN nanowire heterostructures emitting at - 280 nm and their application for electrically injected ultraviolet (UV) lasers. Highly uniform, nearly dislocation-free AIGaN nanowire arrays will be grown on Si or sapphire substrate using the technique of selective area growth by molecular beam epitaxy. We will investigate the incorporation of self-organized AIGaN quantum dots in nanowire arrays to achieve high efficiency luminescence emission at- 280 nm. We will also investigate the epitaxy, structural, and charge carrier transport properties of Mg-doped AIGaN nanowires and achieve highly efficient current conduction by exploiting the significantly reduced Al-substitutional Mg-dopant formation energy in AIGaN nanowire structures, compared to their planar counterparts . The design, epitaxy, fabrication and testing of AIGaN nanowire edge-emitting lasers will be studied, with the objective to achieve electrically pumped semiconductor lasers operating at - 280 nm that can exhibit relatively low threshold, high output power, and high wall-plug efficiency.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 11, 2018
- Source ID
- W911NF1710109
Entities
People
- Zetian Mi
Organizations
- Army Contracting Command
- United States Army
- University of Michigan