Equipment for the Optical Characterization of AlGaN Nanowire Heterostructures for Deep Ultraviolet Optoelectronics
Abstract
In this project, we propose to investigate the epitaxy and structural and optical properties of Alrich AlGaN nanowire heterostructures. The nanowires will be grown using the special technique of selective area epitaxy to achieve a precise control of their size, spacing, and surface morphology, and the formation of quantum dots will be incorporated to achieve high efficiency, tunable emission in the deep UV spectral range. We will further investigate the design, fabrication, and testing of edge-emitting and surface-emitting AlGaN nanowire light sources, including LEDs and electrically pumped lasers operating in the UV-C band. We request a deep UV photoluminescence system to characterize the optical properties of AlGaN nanowire heterostructures. The system includes a 193 nm excimer laser, high resolution spectrometer, deep UV CCD, cryostat, mirrors, lenses, and other related optical components, with a total budget of $149,637.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 11, 2018
- Source ID
- W911NF1710235
Entities
People
- Zetian Mi
Organizations
- Army Contracting Command
- United States Army
- University of Michigan