Option 2: Address a Major Challenge in Silicon Quantum Dot Qubits
Abstract
The inability to perform read-out in a majority of Si MOS and Si/SiGe spin qubit devices presents one of the biggest challenges to the Si qubit research community. In this experimental program, we propose to improve the outlook of the spin-read-out in two different areas. First, given the small valley splitting in an overwhelmingly large number of SiGe QD devices, we will conduct a sequence of coherent manipulation experiments on a series of highly-tunable and well-characterized Si/SiGe QD devices to develop advanced read-out schemes. The small valley-splitting tolerant methods will use specially-designed pulses and exploit the valley-parity effect. In addition, accumulation mode QD devices with designs similar to those used by other major experimental groups will be fabricated to test the small-valley-splitting tolerant methods so that results obtained here can be compared with other results. Second, an e-beam-less nanofabrication process will be developed to reduce charge impurities in the proximity of Si MOS QDs to a level comparable to that of epitaxial heterostrucures, while preserving the basic device structure of Si MOS, thus avoiding the read-out difficulty produced by parasitic dots. The project is completely in line with the call for option 2 proposals and is based upon the accumulated experience of the group in both Si MOS and Si/SiGe QDS fabrication and characterization. If a major portion of the concentrated effort is successful, it will qualitatively improve the yield and fidelity of the spin-based Si qubits as well as make the implementation of a multiple-qubit system more practical.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 11, 2018
- Source ID
- W911NF1710242
Entities
People
- Hong-Wen Jiang
Organizations
- Army Contracting Command
- National Security Agency
- University of California, Los Angeles