Ultrapure Reactive Ion Etching for Scalable Nanofabrication of Carbon-Based Semiconductor Quantum Devices
Abstract
Quantum computation and communication systems enable capabilities that are impossible in their classical counterparts. Impurities in diamond, such as the nitrogen vacancy (NV) color center, have emerged as a leading platform for solid-state spin qubits. High-fidelity logic gates, error correction, and long-range entanglement have already been demonstrated, but improved experimental techniques are required to enable scalable systems. In these solid-state systems, the quality of the substrate patterning is of utmost importance, as contamination leads to decoherence of quantum properties, lowering entanglement rates and decreasing fidelity. Here, we propose a carbon-only ultrapure reactive ion etching system for the scalable nanofabrication of carbon based semiconductor quantum devices, with a particular focus on nitrogen vacancy (NV) and silicon vacancy centers (SiV) in diamond. This system would greatly improve the quality of diamond nanophotonic devices coupled to atom-like quantum memories, and promises to enable the first scalable semiconductor-based quantum systems for which the entanglement rate of quantum registers is substantially faster than the decoherence rate. This project summary is publically releasable.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 11, 2018
- Source ID
- W911NF1710268
Entities
People
- Dirk Englund
Organizations
- Army Contracting Command
- Massachusetts Institute of Technology
- United States Army