Solar Blind Sn-alloyed Ga2O3 Schottky Photodetectors

Abstract

The primary objective of this 9-month STIR is to demonstrate the feasibility of Sn-alloyed Ga2O3 (TGO) Schottky photodetectors, providing the foundation that justifies considering the approach for future device development/demonstration funding by the Army. Building upon recent work in Prof. Schoenfeld s group, the initial task aims to complete the necessary materials characterization we have already begun so that we can then move towards the later tasks aimed at demonstrating high responsivity TGO Schottky detectors that show competitive promise.

Document Details

Document Type
DoD Grant Award
Publication Date
Oct 06, 2018
Source ID
W911NF1710377

Entities

People

  • Winston V. Schoenfeld

Organizations

  • Army Contracting Command
  • United States Army
  • University of Central Florida

Tags

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design