Molecular Beam Epitaxial Growth of InGaN/GaN Dot-in-Nanowire Heterostructures
Abstract
In this project, we propose to investigate the molecular beam epitaxial (MBE) growth and structural and optical properties of InGaN/GaN dot-in-nanowire heterostructures that can operate in the deep visible to near-infrared spectral range. The nanowire arrays will be grown by the technique of selective area epitaxy, which can offer a precise control of the size, spacing, and emission wavelength. The luminescence efficiency of InGaN nanowires will be thoroughly investigated . By optimizing the size and quantum-confinement and by incorporating core-shell structures, we aim to achieve InGaN dot-in-nanowire arrays with luminescence efficiency comparable to that of lnGaN blue-emitting quantum well LED structures. Work in this project will enable an unprecedented understanding of the selective area epitaxy, and optical and electronic properties InGaN dot-in-nanowire heterostructures, which may emerge as the materials of choice for a new generation of low threshold, high speed semiconductor lasers for both short-reach and on-chip optical interconnects.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 11, 2018
- Source ID
- W911NF1710388
Entities
People
- Zetian Mi
Organizations
- Army Contracting Command
- United States Army
- University of Michigan