ACQUISITION OF THE AUGER ELECTRON PROBE FOR IN SITU CONTROL OF MBE GROWTH OF ULTRA NARROW GAP METAMORPHIC SEMICONDUCTOR MATERIALS
Abstract
Extensive research program of Optoelectronics group of SUNY is focused on semiconductor optoelectronics devices for military and civilian applications. Among recent group achievements is development of a new type high power interband mid-IR cascade lasers and high brightness mid-IR light emitting diodes (LEDs). The group holds world records on output power of room temperature operated mid-IR lasers and LEDs. The key to the group success is state-of-the-art molecular beam epitaxy (MBE) technology which makes it possible to create new semiconductor materials and heterostructures of highest quality. New metamorphic semiconductor alloys with controllable composition modulation recently developed in the Optoelectronics group allowed extending of the operation wavelength range of GaSb-based III-V materials to Far-infrared and terahertz spectral region. While opening bright prospective, the new MBE growth techniques need high precision control over the crystalline quality and composition of the epitaxial material. To fulfill this requirement and enable the epitaxial regrowth of antimonides we propose to fund installation into our growth reactor of the equipment facilitating the achievement of the required functionality. The acquired system is expected not only to increase the material and hetero-interface quality, but to shorten dramatically the development cycle and facilitate early deployment of the novel materials and devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Oct 30, 2018
- Source ID
- W911NF1710424
Entities
People
- Gregory Belenky
Organizations
- Army Contracting Command
- Research Foundation for the State University of New York
- United States Army