Quantum Dot Lasers with Asymmetric Barrier Layers: A Novel Type of Semiconductor Lasers

Abstract

To study theoretically the static characteristics of quantum dot lasers with asymmetric barrier layers assuming that the asymmetric barrier layers function ideally.

Document Details

Document Type
DoD Grant Award
Publication Date
Oct 06, 2018
Source ID
W911NF1710432

Entities

People

  • Levon V Asryan

Organizations

  • Army Contracting Command
  • United States Army
  • Virginia Tech

Tags

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Structural Dynamics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing