Epitaxial superconductor-semiconductor two-dimensional systems: a new platform for quantum computation
Abstract
Recently, advances in materials synthesis have enabled a variety of new devices, including detectors, sensors, low noise amplifiers and new potential avenues for quantum computation. Recent superconducting qubit experiments have demonstrated single and two-qubit gate operations with fidelities exceeding 99%, placing fault tolerant quantum computation schemes within reach. On the other hand, semiconductor based devices have their own merits: fast manipulation, low-power consumption and a more direct path toward scalability. Recent studies show that hybrid superconductor and semiconductor devices could have advantages of both systems. This proposal aims to investigate the fundamental structural and electronic properties of superconductor-InAs interfaces for quantum computation application. We will explore the epitaxial growth of Al on InAs two-dimensional structures and devices. We fabricate gatecontrolled Josephson junctions (to operate at above 4.2 K) through energy bandgap engineering by promoting the real-space transfer of electron charge carriers from the quantum well into the barrier layer and proximitizing Al thin films by higher Tc superconductors We investigate quantum devices and qubits to study the Andreev states, measure and tune charging and Josephson energy in direct current and microwave frequency regimes. These experiments will be integrated with fast fabrication and turnaround cycles with the goal to link the interface properties to basic properties of qubits (e.g. coherence times, operational clock and absorption)
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 14, 2019
- Source ID
- W911NF1810067
Entities
People
- Javad Shabani
Organizations
- Army Contracting Command
- New York University
- United States Army