Merged element transmons
Abstract
Existing transmon designs utilize a very small tunnel junction with a large shunt capacitor to limit the participation factor of the lossy junction dielectric . We describe a new approach that allows for integration of the junction capacitance and non-linear effective inductance. The integration hinges on developing ultra-low loss tunnel barriers and dielectrics. The core of this proposal is to develop a fabrication process that independently optimizes the growth of the superconducting electrodes and the tunnel barrier. A wafer bonding solution will be explored in order to simultaneously achieve scalability in fabrication and investigate a wide range of materials . The project is divided into three general plans: 1) fabrication or test-structures for admittance metrology of different epitaxially grown junctions at gigahertz frequencies, 2) realization merged-element transmon qubits with an optimized materials set, and finally 3) investigation of multi-qubit systemes that utilize this new hardware, including operation of two-qubit gates.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 11, 2018
- Source ID
- W911NF1810114
Entities
People
- Chris J. Palmstrøm
Organizations
- Army Contracting Command
- National Security Agency
- University of California, Santa Barbara