2018 Defects in Semiconductors Gordon Research Conference & Gordon Research Seminar Research Program 1.3 Physical Properties of Materials, Materials Science Division
Abstract
From the development of the transistor to the realization of the Nobel Prize winning light emitting diode, continuing forward to 2-D and spin-controlled electronics, defects in semiconductors have been both necessary and deleterious. The topics discussed at this conference are very relevant to the ARO program in Physical Properties of Materials because they include discussions focused on the influence of defects on the electronic, photonic and magnetic properties of semiconductors. In particular, sessions will emphasize the manipulation of defects/impurities in 1-D and 2-D systems and the control of defect formation during growth of thin film and bulk semiconductors. As ARO realizes, the ability to manipulate and control defects is important, particularly as technology heads to ever more efficient devices based on increasingly diverse mechanisms. Detailed understanding of the fundamental physics and chemistry is mandatory for the creation of these new game-changing electronic devices. To address the every expanding and complex issues the 2018 GRC on Defects in Semiconductors will bring together leading experts from industry, academia, and national laboratories for discussions on defects in a wide variety of semiconductor systems, including transition metal dichalcogenides along with semiconductors relevant to high power generation using wide band gap oxides and nitrides. Since 2014, the Gordon Research Conference (GRC) has been complemented by a highly successful Gordon Research Seminar (GRS) designed by and for graduate students and post-docs. The two-day GRS, which immediately precedes the GRC, acclimates young scientists to the unique style of Gordon Conferences and encourages them to share and present their ideas to their peers. GRS participants are encouraged to attend the subsequent GRC. The Conference and associated student-Seminar will be held at the Colby Sawyer College, New London NH August 19-24, 2018. The meeting Chair, Mary Ellen Zvanut (University of Alabama at Birmingham) and Vice-Chair, Jeffrey McCallum (The University of Melbourne, Australia) are responsible for the technical program. They will be assisted in this task by a 10 member program committee consisting of many leaders in the defects community from a diverse group of national and international universities and government laboratories. The local arrangements and administrative functions will be provided by the Gordon Research Conference staff. This Gordon Research Conference and associated Gordon Research Seminar is the unique biennial opportunity to discuss defects across all semiconductor materials and applications in an off-the-record format. The 2018 Conference on Defects in Semiconductors will continue the tradition of fostering open discussion so that new ideas can foster free flow of ideas, leading to advances in materials for a wide range of technological applications.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 08, 2019
- Source ID
- W911NF1810283
Entities
People
- Mary Ellen Zvanut
Organizations
- Army Contracting Command
- Gordon Research Conferences
- United States Army