Explore the Growth and Novel Physics of New Phases of Octet Compound Semiconductors

Abstract

We have a long-term research plan for the next a few years to explore the growth and novel physics of new phases of octet (II-VI, III-V, and IV-IV) compound semiconductors. The plan is of high risk yet promises high scientific returns. While our preliminary work hints on the feasibility, these new phases have not been rationally synthesized. As the first major experimental step of the plan, we propose a STIR project to synthesize an sp^2-coordinated, planar polymorph of AlN, which is part of a system that promises intriguing novel physics. While the discovery of a new phase of a compound is exciting in its own right, the more significant importance of the work is that it calls for a rethink of the possible existence of sp^2-coordinated, 2D layered forms of octet compound semiconductors. To explain the discovery, we carried out theoretical investigations, which have been extended to other octet compounds. Among the compounds we have theoretically studied, AlN is predicted to possess the best structural stability. More important, it is part of a system that has been predicted to exhibit novel spin physics. Therefore, we propose the synthesis of the sp^2-coordinated, planar polymorph of AlN, or h-AlN, as the first stage of our long term plan. The successful growth of h-AlN on a 2D material substrate will demonstrate the principle suggested by our previous work on h-BeO, that growth of sp^2-coordinated, planar polymorphs of octet compounds initiates on chemically inert 2D material substrates, opening the potential for growing such polymorphs of a host of other octet compounds, which will enable the investigation of the novel physics associated with these materials, e.g., as the example discussed above. Such novel physics will potentially lead to paradigm shifting applications, .e.g., in spintronics. Discoveries of new materials with novel physical properties as proposed here will enable innovative future Army applications. The proposed cutting-edge innovative research is highly likely to produce discoveries that would have a significant impact on enabling new and improved Army operational capabilities and related technologies.

Document Details

Document Type
DoD Grant Award
Publication Date
Feb 14, 2019
Source ID
W911NF1810382

Entities

People

  • Gong Gu

Organizations

  • Army Contracting Command
  • United States Army
  • University of Tennessee

Tags

Readers

  • Materials Science and Engineering.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene