Purchase of LayTec EpiTT Gen 3 High-Temperature Real-Time Optical Monitoring Equipment for In-Situ Control of AlGaN/AlN/GaN Growth in an MOCVD System
Abstract
1 Proposed AIXTRON CCS 6x2 in. III-N MOCVD Growth System Upgrade Equipment We are requesting funds of $60,000 for an important upgrade for our existing III-N MOCVD system used in our ARO program W911NF-15-1-0489. The requested funds will allow us to upgrade one of our AIXTRON CCS 6x2 MOCVD systems to include the LayTec Epi TT Gen 3 third-generation triple-wavelength high-temperature in-situ emissivity corrected pyrometer for real-time growth temperature monitoring. This new LayTec system will provide additional and more accurate information for the in-situ monitoring and optimization of the MOCVD growth of AlGaN-GaN-based ultraviolet (UV) and deep-UV (DUV) avalanche photodiodes (APDs). This real-time growth monitoring and growth temperature information will be important in the improvement of the properties of the UV and DUV APDs being grown by MOCVD under the ARO MURI Contract (R.D. Dupuis is Co-PI of this program), as well as for other DoD-related programs. This MOCVD system is used exclusively in the training of Georgia Tech Electrical and Computer Engineering and Materials Science PhD graduate students and Post-Doctoral Fellows who become experts in the growth of complex III-V heterostructure materials. Several of the past graduate student users of this equipment from DupuisÕ lab have continued working in this area beyond graduation and are supporting the DoD missions and commercial products by growing device structures at their companies
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 08, 2019
- Source ID
- W911NF1810404
Entities
People
- Russell D. Dupuis
Organizations
- Army Contracting Command
- Georgia Tech Research Corporation
- United States Army