Sensors and Infra-red Materials for Photodetection (SIMPLe)
Abstract
Publicly Releasable Abstract Sensors and Infra-red Materials for Photodetection (SIMPLe) Uncooled infrared detectors are utilized in night vision systems and scientific instruments such as spectrometers and radiometers. A microbolometer is a class of infrared detector whose resistance changes with change in temperature. Lights from an object(s) or portion of an object whose temperature is greater than zero Kelvin, radiates at a particular wavelength depending on its temperature. The radiation from the object when falls on microbolometerÕs sensing layer, itÕs temperature changes. Because of this temperature change, the resistance of the sensing layer changes. The change in resistance is sensed through the interface circuitry and eventually forms image of the object in night vision cameras. Microbolometers provide good performance that has enabled systems to be developed, which have reduced size, weight, and power consumption. Although a-Si and VOx are the most widely used sensing layer materials for microbolometers, the microbolometers fabricated from these materials suffer from lower figures of merits because of their low change in resistance with temperature (TCR) and lower absorption in the bands of interest. The Ge-Si-O based materials exhibit promise for higher TCR, but has not been studied extensively. In this work, we propose to investigate some of the optical and electrical properties of Ge-Si-O based alloys for using them as the sensing material of microbolometers. The thin films will be deposited by co-sputtering in the Ar+O environment using a radio frequency sputtering system. Investigations of 1/f-noise, TCR, optical bandgap, activation energy, transmittance, absorptance and reflectance with various atomic compositions of Ge-Si-O based alloys for 3-5 and 8-12 µm wavelengths will be done. This work will also include design, fabrication and characterization of microbolometers with suitable atomic compositions of Ge-Si-O based alloys. The investigation will help us to understand the relationship between the atomic compositions in Ge-Si-O based alloys on some of their electrical and optical properties. The proposed work will also yield exciting new properties applicable to adaptive sensors, and micro-sensors for US department of defenseÕs interest. The investigation will help to implement Ge-Si-O based alloys for their commercial applications in uncooled infrared detection as the thermal imaging technology involving a-Si and VOx sensing layers is mature and came to a saturation point. This work will also help to develop new materials for microbolometer used in long wave (8- 12 µm) and specially, medium wave infrared (3- 5 µm) band where US army does not have a suitable material to use. The proposed work will also broaden the participation of underrepresented groups as well as enhance the research capabilities and education at Delaware State University.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 19, 2019
- Source ID
- W911NF1810448
Entities
People
- Mukti Rana
Organizations
- Army Contracting Command
- Delaware State University
- Office of the Secretary of Defense