Quantum spin Hall effect in solution-manufactured bismuthene for room-temperature topologically protected dissipationless electronics
Abstract
The scientific objectives of this three-year YIP proposal include to (1) demonstrate the scalable, cost-effective solution synthesis of high-quality quantum spin Hall (QSH) insulator 2D Bi (bismuthene) with controlled yield and dimensions; (2) identify and reveal the fundamental process-structure-property-functionality relationship regarding the QSH device applications; and (3) explore engineering approaches for manipulating the topological states in bismuthene. The fundamental electronic structure, nature of the topological states, and the quantum transport in 2D bismuthene will be systematically characterized. The proposed research will allow us to create new fundamental knowledge in designing and developing novel quantum materials, engineering their topological phases/states, and enabling the next-generation quantum nanoelectronics capable of topologically protected dissipationless transport. The proposed research can also lead to new approaches in the implementation of scalable quantum nanoelectronics and spintronics that can operate with minimized power dissipation. The scientific findings and resultant technical developments offered by this research program align well with DOD/AROÕs strong interests in developing next-generation quantum nanoelectronics. Execution of the proposed research will not only open the doors for synthesizing novel QSH materials with a broad range of tunable properties but also create a paradigm shift in the design and implementation of new device concepts for low-power dissipationless transport in future nanoelectronics.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 09, 2020
- Source ID
- W911NF2010118
Entities
People
- Wenzhuo Wu
Organizations
- Army Contracting Command
- United States Army
- University of Virginia