Room Temperature Optoexcitonic Components for On-Chip Data Communication
Abstract
Room temperature excitonic devices for on-chip interconnects, remains an untrespassed area of research, primarily due to lack of a good material system and an efficient approach to direct the exciton flux in space. We propose to focus on manipulating optically active excitonic states in transition metal dichalcogenides using nanostructures to demonstrate a fast and efficient switch that would layout a platform for next generation integrated optoexcitonic devices. In the proposed work, we will first convert a photon into an exciton that is two orders of magnitude smaller in size, and then manipulate the excitonic flux in space before remitting the photon. Thus, by pushing the boundaries of material science, nanofabrication and nanophotonics, we will demonstrate a room temperature, highly efficient, low energy consuming, on-chip integrated optoexcitonic switch. Leveraging the results, we will investigate plausible pathways for achieving high capacity next- generation interconnect links. Results from this work will layout a platform for the next generation data communication and processing technology in the form of optoexcitonic circuits that proficiently utilize light-matter interactions to achieve highly efficient data processing and communication networks. Above and beyond addressing technological challenges, this research at the frontiers of optoelectronic and quantum devices aligns with the capabilities central to achieving Army Research OfficeÕs mission in developing efficient, novel optical components for high speed switching for data communication and processing.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jun 25, 2021
- Source ID
- W911NF2110207
Entities
People
- Parag B. Deotare
Organizations
- Army Contracting Command
- United States Army
- University of Michigan