Development of AlGaN Multiple Quantum Well UVC Laser Structures over Pulsed Lateral Epitaxially Overgrown Low Defect Density AlN Templates
Abstract
Recently under an ARO supported program, our research group has for the first time reported on several major accomplishments in the field of UVC opto-electronics: (1) Low-loss waveguides using ultrawide bandgap (UWBG) AlxGa1-xN epilayers; (2) integrated AlxGa1-xN UVB-C LEDs, detectors and waveguides; (3) Extremely bright UVC micro-LEDs using UWBG AlxGa1-xN multiple quantum wells (MQW) with DC current densities above 20 kA/cm2. In this proposed work, we plan to use these achievements to demonstrate population inversion/stimulated in edge UWBG UVC laser structures. A successful program will form the basis for UVC s lasers and super luminescent diodes (SLDs). Such UVC lasers are critical for current and future Army needs in bio-chemical sensing, threat identification and secure communications.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jun 25, 2021
- Source ID
- W911NF2110217
Entities
People
- Asif Khan
Organizations
- Army Contracting Command
- United States Army
- University of South Carolina