Lattice-Matched InGaBiAs on InP for Extended Wavelength SWIR Detection
Abstract
The study of InGaBiAs material alloys lattice matched to InP will be studied and applied to infrared detector devices covering the full extended range short wave infrared (eSWIR) region with cutoff wavelength out to 2.5 micrometers. Success of this material alloy as a lattice matched system to InP bridges the current SWIR technology gap, overcoming spectral limitations of In0.53Ga0.47As/InP, dark current limitations of extended range InGaAs, quantum efficiency limitations of type-II superlattices, and cost, yield, and operability concerns of HgCdTe. Advancement of eSWIR detectors provides access to systems utilizing the 2.2 micrometer atmospheric window, providing longer distance imaging visibility through haze and fog, and improved target discrimination and tracking. The project will investigate the growth, structural properties, and doping of InGaBiAs by molecular beam epitaxy. The materials will be characterized in detail to understand relevant optoelectronic properties including optical absorption, carrier concentration and mobility, and minority carrier lifetime. Device structures will be designed to optimize performance based on material properties, including approaches of planar p-n junction devices and barrier-integrated architectures such as nBp to optimize dark current and quantum efficiency.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jun 25, 2021
- Source ID
- W911NF2110257
Entities
People
- Jamie D Phillips
Organizations
- Army Contracting Command
- United States Army
- University of Delaware