System for the synthesis, characterization, and fabrication of 2D materials and devices
Abstract
This proposal seeks to realize an equipment system for the synthesis, characterization, and fabrication of 2D materials and devices at the Department of Physics & Astronomy of Georgia State University. The system is to be comprised of several key pieces of equipment, which together will help to realize novel 2D atomic layer materials, fabricate devices on such material, and characterize the material quality and the high frequency response of devices realized on 2D materials. Thus, we request funding for (a) A Raman microscope at a cost of $ 215,000, (b) A 2D materials Chemical Vapor Deposition System at a cost of $59,000, (c) A Reactive Ion Etch System at a cost of $55,935.90, (d) an Atomic Layer Deposition System at a cost of $69,860, and (e) a mm-wave Signal Analyzer at a cost of $124,880.30.00. Here, (a) will help to chemically characterize 2D materials & heterostructures, (b) will help to synthesize 2D materials, (c) will help to pattern the 2D materials, (d) will help to apply high quality insulating dielectrics on the 2D materials for top-gating purposes, and (e) will serve to characterize to mm-wave activity of the 2D materials. The requested equipment/instrumentation is expected to advance, at Georgia State University (GSU), the fabrication and study of electrical and electro-optic devices realized using atomically thin 2D materials including graphene, boron nitride, and transition metal dichalcogenides such as molybdenum disulfide, molybdenum diselenide, tungsten disulfide, tungsten diselenide, and heterostructures of these 2D systems Ð material systems with desirable physical properties in the so-called new materials world Òbeyond graphene.Ó The proposed site of instrumentation-location, Georgia State University (GSU), is the largest university by enrollment in the state of Georgia and it is a Title III institution, with a student body that is 41.9% Black/African-American, 59% female, 9.9% Hispanic/Latino, and 13% Asian/Native American/Pacific Islander. The Physics and Astronomy Department at GSU involves graduate and undergraduate students in research from an early stage. Thus, the requested instrumentation will provide to students, mostly from the under-represented sections of society in the physical sciences, valuable training and skills in areas at the intersection of modern electronic materials, nanoscience, and microwave-terahertz technology. The PI is well qualified for utilizing this type of research instrumentation due to his extensive experimental experience in material preparation, characterization, device fabrication, measurement, and study of the electrical- and microwave/terahertz photo-excited- properties of low dimensional electronic systems. Notably, he participated in the experimental discovery of the microwave-induced zero-resistance states (R. G. Mani et al., Nature 420, 646 (2002)), in the resistive detection of spin resonance in graphene (R. G. Mani et al., Nature Comm. 3, 996 (2012)), in the identification of domain-confined bipolar current near the neutrality point of graphene (R. G. Mani, Appl. Phys. Lett. 108, 033507 (2016)), in Hall effect sign reversal in semiconductors (R. G. Mani et al., Nature, 548, 7665 (2017), and R. G. Mani, Physics Today 70 (7), 13 (2017)), and in the growth and characterization of single crystal graphene (T. Nanayakkara et al., Carbon 168, 684 (2020)|doi:10.1016/j.carbon.2020.07.025).
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jun 25, 2021
- Source ID
- W911NF2110285
Entities
People
- Ramesh Mani
Organizations
- Army Contracting Command
- Georgia State University
- Office of the Secretary of Defense