Epitaxial superconductor-semiconductor two-dimensional systems: a new platform for quantum computation
Abstract
Recently, advances in materials synthesis have enabled a variety of new devices, including detectors, sensors, low noise amplifiers and new potential avenues for quantum computation. Recent superconducting qubit experiments have demonstrated single and two-qubit gate operations with fidelities exceeding 99%, placing fault tolerant quantum computation schemes within reach. On the other hand, semiconductor based devices have their own merits: fast manipulation, low-power consumption and a more direct path toward scalability. Recent studies show that hybrid superconductor and semiconductor devices could have advantages of both systems. The challenge is inherent in interfacing two dissimilar materials, e.g. aluminum and indium arsenide or silicon, with different crystal and electronic properties. For superconducting devices, losses in or at interface (native oxides, dielectrics) could severely limit device performance. In semiconductors, roughness introduces trap centers and charge noise. These are very challenging materials problems and therefore solving such fundamental problems potentially impacts a wide range of future technologies including classical and quantum information processing. However, problems with metal/semiconductor interface and variations in device performance inhibited the transformation of this device concept into a viable device technology. This proposal aims to investigate the fundamental structural and electronic properties of superconductor-semiconductor (S-Sm) interfaces for quantum computation application.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jun 25, 2021
- Source ID
- W911NF2110303
Entities
People
- Javad Shabani
Organizations
- Army Contracting Command
- New York University
- United States Army