Equipment for DLTS studies of antimonide materials.
Abstract
Defects arising from impurities, grain boundaries, interfaces, etc. result in the creation of traps which capture free electrons and holes. Even at very low concentrations these trapping centers can dramatically alter device performance. Deep Level Transient Spectroscopy (DLTS) is an extremely versatile technique for the determination of virtually all parameters associated with traps including density, thermal cross selection, energy level and spatial profile. The state-of-the-art DLTS experimental system will support development of the III-V-Sb materials and devices at Stony Brook University. The system will be used to optimize epitaxial regimes to achieve the minimal number of the trap states in bulk alloys as well as at the heterointerfaces between bulk alloys, at the regrown heterointerfaces, and in short period superlattice metamorphic materials. These materials are utilized for design and development of the mid-infared photonic crystal surface emitter lasers, long wave infared barrier photodetectors, infrared light modulators, mid-infrared avalanche photodiodes operating in linear and Geiger modes, as well as for 2D materials and quantum light sources for quantum information science applications. Specifically, the wide bandgap materials which are serving critical roles as: claddings in the mid-infrared lasers, barriers in mid-infrared photodetectors, and carrier multipliers in avalanche photodiodes can contain substantial concentration of the deep defect levels if grown or regrown under suboptimal conditions. The proposed equipment acquisition will directly support three on-going and four pending research projects at Stony Brook University funded by DoD, NSF and DoE.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 24, 2023
- Source ID
- W911NF2310074
Entities
People
- L. Shterengas
Organizations
- Army Contracting Command
- Research Foundation for the State University of New York
- United States Army