High Power, Low Threshold Electrically Pumped Mid and Deep Ultraviolet Laser Diodes
Abstract
High Power, Low Threshold Electrically Pumped Mid and Deep Ultraviolet Laser Diodes This project is related to the development of AlGaN epitaxial nanoridge waveguide laser diodes operating in the mid and deep UV spectra. Compared to conventional quantum well edge-emitting devices, our proposed nanoridge laser heterostructures are largely free of dislocations and can exhibit highly efficient p-type conduction. Moreover, they do not suffer from any size variations of conventional nanowire structures, thereby enabling high power operation with high beam quality. Self-organized Ga(Al)N quantum dots will be incorporated as the gain medium to significantly reduce the transparency carrier density and threshold current of UV laser diodes. The scheme of tunnel junction will also be incorporated to further enhance hole injection and transport in the device active region. Combining the distinct advantages of nanostructures with epitaxial ridge-waveguide design, this project will lead to the demonstration of electrically injected semiconductor edge-emitting UV laser diodes that can exhibit high output power and low threshold current. The temperature-dependent output characteristics, beam profile, and wall-plug efficiency will also be thoroughly investigated.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 28, 2023
- Source ID
- W911NF2310142
Entities
People
- Zetian Mi
Organizations
- Army Contracting Command
- United States Army
- University of Michigan