Epitaxial Oxides on Si for Fundamental Electronic Transport Studies, Quantum Effects and Device Integration
Abstract
Transition metal oxides host collective ground states such as ferroelectricity, multiferroicity, and high-temperature superconductivity. The possibility of growing oxide layers and nanostructures on Silicon and utilizing spin-orbit coupling, electron-electron interactions and superconductivity will be explored. The growth and structure of correlated oxides grown by oxide molecular beam epitaxy on Silicon as they relate to the quantum electronic properties of the heterostructures will be investigated. Building on our existing expertise, we will establish growth protocols for correlated quantum heterostructures and we will use the interface properties and oxide functionalities to tailor quantum properties. The proposed research focus is on understanding the fundamental physics of charge transport at oxide interfaces with Si for the discovery and characterization of quantum phenomena with the goal of creating and enhancing spin orbit coupling, correlated states through direct control over materials growth conditions, doping, and interfacial strain of low-dimensional oxides on Silicon. The research efforts will be hosted in an institutional environment that provides training to the next generation of scientists and technical experts from diverse backgrounds that can inspire out-of-the box thinking and training and who will contribute to the DoDÕs mission. The combined effort of advanced materials growth and characterization efforts will enhance the scientific training of underrepresented minorities in the STEM fields through basic research and access to state-of-the-art instrumentation. Beyond impact in basic scientific knowledge, the potential of augmenting Silicon with the multifunctionality of perovskite oxides promises tremendous benefit for technological applications. The proposed research can enable a novel approach for developing quantum materials and quantum sensors, or by delivering novel device concepts that could have an impact in semiconductor applications. The proposed investigations contribute to the programmatic goal of advancing quantum material heterostructures and oxide electronics that will ultimately enable fundamental Army technologies.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 24, 2023
- Source ID
- W911NF2310164
Entities
People
- Nikoleta Theodoropoulou
Organizations
- Army Contracting Command
- Office of the Secretary of Defense
- Texas State University