Support for the 16th International Conference on Mid-infrared Optoelectronics: Materials and Devices

Abstract

The middle infrared (Mid-IR) spectrum is broadly defined as electromagnetic waves with a wavelength range from 2 to 20 microns. The practical realization of optoelectronic devices operating in the Mid-IR opens many doors for potential applications in the areas of i) environmental gas monitoring around oil rigs and landfill sites, ii) detection of pharmaceuticals, particularly narcotics, iii) free-space optical communications through atmospheric transmission windows at 3-5 microns and 8-12 microns, iv) thermal imaging applications and the development of infrared measures for homeland security, and v) sensitive optical sensor instrumentation. In the last a few decades, there have been significant developments in mid-IR technology ranging from lasers operating at room temperature to high performance infrared imaging to mid-IR integrated photonics. However, the nature of the likely applications dictates stringent requirements in terms of laser operation, miniaturization and cost that are difficult to meet. Many of the necessary improvements are linked to a better ability to fabricate and to understand the optoelectronic properties of suitable high-quality epitaxial materials and device structures. As a foundation of mid-IR optoelectronics, mid-IR materials research activities have also seen a dramatic increase along with the device development. This includes novel materials such as III-V-Bi compounds, group-IV SiGeSnPb alloys, new 2D materials, and new material structures such as Ga-free type-II superlattices, integrated III-V and II-IV structures, and integrated semiconductor and complex oxide structures. The fast development of this field draws attention to the need for a venue for researchers in this area to meet regularly to exchange the latest results, socialize as a friendly and dynamic community, and further promote research activities. Although there are many conferences currently embracing a theme of mid-IR optoelectronics, most of them are either narrowly focused or have scattered the mid-IR topics across many parallel sessions in a nearly one-week long meeting. In contrast, a conference with focused topics on mid-IR optoelectronic materials and devices will attract most of key players in the area and serve as an ideal venue. For this reason, we propose to host the well-known International Conference on Mid-Infrared Optoelectronics: Materials and Devices in 2023 to provide an opportunity for the community to attend this biannual reunion event.

Document Details

Document Type
DoD Grant Award
Publication Date
Aug 02, 2023
Source ID
W911NF2310325

Entities

People

  • Michael Santos

Organizations

  • Army Contracting Command
  • United States Army
  • University of Oklahoma

Tags

Readers

  • Academic Conference Management
  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Space