Topological Junctions
Abstract
Modem electronic, photonic, and quantum devices are based on interfaces and junctions. The emergence of topological materials as a new class of electronic materials has generated significant theoretical insights not just into their bulk and boundary states, but also the properties of their interfaces. Topological junctions have many unique properties not found at conventional semiconductor interfaces, such as Klein tunneling, electron "optic" phenomena, and the possibility of quantum interference phenomena based on unique types of edge states. To date, however, experimental studies of junctions with topological materials have largely focused on their interfaces with superconductors for quantum devices. The main objective of the proposed project is to utilize the excellent transport properties of epitaxial cadmium arsenide thin films, tuned into different topological phases, to realize prototype junctions, including lateral p-n ??unctions and vertical heterojunctions, in a topological material. These junctions represent key ingredients of future device technologies that make use of the unique properties of topological materials. In particular, we will focus on the fundamental properties of these junctions with a view of room temperature applications such as future solid-state devices that can operate in the terahertz frequency range, which is currently difficult to access with conventional semiconductors. Another main goal is to reveal not only the prospects of these junctions for device applications, but also their science.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 01, 2023
- Source ID
- W911NF2310371
Entities
People
- Susanne Stemmer
Organizations
- Army Contracting Command
- United States Army
- University of California, Santa Barbara