High Frequency Wide Band Gap Semiconductor
Abstract
The High Frequency Wide Band Gap Semiconductor program fully exploited the properties of wide bandgap semiconductors (WBGS) to enhance the capabilities of microwave and millimeter-wave (MMW) monolithic integrated circuits (MMICs) and in turn, enable future RF sensor, communication, and multifunction military capabilities. Wide bandgap semiconductors have the ability to deliver very high power and other very favorable high frequency characteristics. Prior efforts have focused on improvements to the basic semiconductor while current efforts are focused on realizing devices and circuits. These technologies will lead to affordable, high performance, reliable, wide bandgap devices and MMICs with characteristics suitable for enabling new DoD systems and greatly improved performance for fielded platforms. This effort addressed the Applied Research portion of the program. In this effort, the electronic devices with long lifetimes were developed. The effort develops models to predict device electronic performance and reliability characteristics, to ensure reproducible behavior and to enable integration of these devices into integrated circuits. This program also has efforts funded in PE 0603739E, project MT-15.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2012
- Source ID
- c0a48ae2fbfe501ab71623acef32eec2
Related Documents
- Root: ELECTRONICS TECHNOLOGY