SOLID STATE ELECTRONICS

Abstract

The overarching objective of this activity is to develop higher performance components and subsystems for all classes of military RF systems that are based on solid state physics phenomena and are enabled by improved understanding of these phenomena, new circuit design concepts and devices, and improvements in the properties of electronic materials. An important subclass are the very high frequency (VHF), ultra-high frequency (UHF), microwave (MW), and millimeter wave (MMW) power amplifiers for Navy all-weather radar, surveillance, reconnaissance, electronic attack, communications, and smart weapon systems. Another subclass are the analog and high speed, mixed signal components that connect the electromagnetic signal environment into and out of digitally realized, specific function systems. These improved components are based on both silicon (Si) and compound semiconductors (especially the wide bandgap materials and narrow bandgap materials), low and high temperature superconductors, novel nanometer scale structures and materials. Components addressed by this activity emphasize the MMW and submillimeter wave (SMMW) regions with an increasing emphasis on devices capable of operating in the range from 50 gigahertz (GHz) to 10 terahertz (THz). The functionality of the technology developed cannot be obtained through Commercial-Off-the-Shelf (COTS) as a result of the simultaneous requirements placed on power, frequency, linearity, operational and instantaneous bandwidth, weight, and size. Effort will involve understanding the properties of engineered semiconductors as they apply to quantum information science and technology. This activity also includes Anti-Tamper development of innovative techniques and technologies to deter the reverse engineering and exploitation of our military's critical technology and critical program information in order to impede technology transfer and alteration of system capability and prevent the development of countermeasures to U.S. systems. The following are non-inclusive examples of accomplishments and plans for projects funded in this activity. The increase from FY 2016 to FY 2017 is due to increased funding for the Electromagnetic Applied Research initiative. The decrease from FY 2017 to FY 2018 is due to a ramp down in funding towards the Anti-Tamper Program.

Document Details

Document Type
Accomplishment
Publication Date
Oct 01, 2018
Source ID
c0eee7278f3320ce5f7d8131518078ba

Tags

Readers

  • Electronics Engineering
  • Integrated Circuit Design and Technology.
  • Military Science and Technology Research and Modernization.

Technology Areas

  • 5G
  • 5G - DoD 5G Program
  • 5G - Internet of Things
  • Microelectronics
  • Quantum Computing

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