Near-Junction Transport (NJT)
Abstract
The Near-Junction Transport (NJT) program explores heat conduction and mitigation through materials layers near a high-power device junction. This program will develop and verify accurate quantitative models for heat generation and transport in and near device junctions to include development of novel high spatial and temporal resolution metrology techniques, fabrication of device-compatible materials and interfaces expected to offer unique thermal characteristics resulting in the development of models, tools, and materials for near-junction thermal management in a broad class of electronic device materials. The second stage will concentrate on development of specific materials to enhance the local heat-spreading in the region of the semiconductor chip. Industry leaders with the expertise in developing high-power semiconductor devices will be expected to demonstrate significantly enhanced heat density and the use of enhanced heat spreading technologies within an existing fabrication process. Additionally, the program will address developing novel device-scale structures to enable highly conductive thermal paths to remove unwanted heat from electronic devices. The impressive improvements obtained through miniaturization and integration in electronics have led to a thermal bottleneck where dense logic circuits, mixed-signal analog and digital circuits, and RF electronics are all limited by energy dissipation in small volumes. This program is a companion program to the Thermal Management Technologies (TMT) program in PE 0603739E, Project MT-12.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2012
- Source ID
- c2eb5d0b5f017c6e03212fadff4d30a3
Related Documents
- Root: ELECTRONICS TECHNOLOGY