Leading Edge Access Program (LEAP)
Abstract
The goal of the Leading Edge Access Program (LEAP) is to enable university, industry, and government lab access to on-shore state of the art Complementary Metal-Oxide Semiconductor (CMOS) technology for performing advanced integrated circuit (IC) research of benefit to the DoD. Specifically, LEAP offers foundry access at a substantially reduced cost for CMOS technology nodes of 45 nanometers (nm) and below. Currently much of the IC design work performed using advanced technology nodes, including that done for the DoD, uses off-shore facilities in Asia and Europe. This results in substantial intellectual property (IP) development outside the U.S. and creates a number of difficulties for technology transition of DoD-critical applications. This program will stimulate U.S.-based advanced design research, providing top researchers early and partially subsidized access to validate and test innovative ideas and facilitate a more natural transition of these ideas.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2013
- Source ID
- c3930aa710e0de7f1e3421834fed7018
Related Documents
- Root: ELECTRONICS TECHNOLOGY