Nitride Electronic NeXt-Generation Technology (NEXT)

Abstract

The objective of the Nitride Electronic NeXt-Generation Technology (NEXT) program is to develop a revolutionary nitride transistor technology that simultaneously provides extremely high-speed and high-voltage swing [Johnson Figure of Merit (JFoM) larger than 5 Terahertz (THz)-V] in a process consistent with large scale integration in enhancement/depletion (E/D) mode logic circuits of 1000 or more transistors. In addition, this fabrication process will be manufacturable, high-yield, high-uniformity, and highly reliable. The accomplishment of this goal will be validated through the demonstration of specific Program Process Control Monitor (PCM) Test Circuits such as 5, 51, and 501-stage of ring oscillators in each program phase.

Document Details

Document Type
Accomplishment
Publication Date
Oct 01, 2014
Source ID
c3b6b526248c3d4f49060a6d1c303a75

Tags

Readers

  • Electrical Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Software Engineering

Technology Areas

  • Microelectronics

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