Spin Torque Transfer-Random Access Memory (STT-RAM)

Abstract

The Spin Torque Transfer-Random Access Memory (STT-RAM) program developed materials and processes to fully exploit the spin-torque transfer (STT) phenomenon for creating "universal" memory elements. This program developed the core technology for exploiting spin-torque transfer and related phenomena for producing large-scale non-volatile memories. Compatibility and stability with expected mainstream processes for semiconductor electronics and patterned media is an important attribute that should enable significant leverage for these new technologies in delivering early demonstrations and in gaining wider acceptance.

Document Details

Document Type
Accomplishment
Publication Date
Oct 01, 2013
Source ID
c49853a362c3a38766d0f550aa8e8c9c

Tags

Readers

  • Integrated Circuit Design and Technology.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics

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