Nitride Electronic NeXt-Generation Technology (NEXT)
Abstract
The objective of the Nitride Electronic NeXt-Generation Technology (NEXT) program is to develop a revolutionary nitride transistor technology that simultaneously provides extremely high-speed and high-voltage swing [Johnson Figure of Merit (JFoM) larger than 5 THz-V] in a process consistent with large scale integration in enhancement /depletion (E/D) mode logic circuits of 1000 or more transistors. In addition, this fabrication processes will be manufacturable, high-yield, high-uniformity, and highly reliable. The accomplishment of this goal will be validated through the demonstration of specific Program Process Control Monitor (PCM) Test Circuits such as 5, 51, and 501-stage of ring oscillators in each program phase. The NEXT program was previously included in the High Frequency Wide Band Gap Semiconductor program.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2012
- Source ID
- ce0db263633f2dc2bbb4285951b9221e
Related Documents
- Root: ELECTRONICS TECHNOLOGY