Spin Torque Transfer-Random Access Memory (STT-RAM)

Abstract

The Spin Torque Transfer-Random Access Memory (STT-RAM) program will develop materials and processes to fully exploit the spin-torque transfer (STT) phenomenon for creating "universal" memory elements. This program will develop the core technology for exploiting spin-torque transfer and related phenomena for producing large-scale memories. Compatibility and stability with expected mainstream processes for semiconductor electronics and patterned media is an important attribute that should enable significant leverage for these new technologies in delivering early demonstrations and in gaining wider acceptance.

Document Details

Document Type
Accomplishment
Publication Date
Oct 01, 2012
Source ID
d0099e35101aa38128ad7b0d09e2590a

Tags

Readers

  • Defense Technology Research and Development.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics

Related Documents