Compound Semiconductor Materials On Silicon (COSMOS)
Abstract
Conventional integrated circuit processing is limited to one type of semiconductor material but many DoD systems have circuits based on multiple types of semiconductor devices. Consequently, these diverse devices and circuits are assembled together on printed circuit boards or in multi-chip modules. This conventional approach suffers from degraded performance at high-speed/RF frequencies due to parasitic and signal path delays, and increased costs due to packaging and module assembly steps. The objective of the Compound Semiconductor Materials On Silicon (COSMOS) program is to develop robust, high-yield semiconductor fabrication technologies and manufacturing processes for the intimate heterogeneous integration of multiple types of devices and semiconductor materials, specifically III-V compound semiconductor (CS) devices into high-density silicon Complementary Metal-Oxide Semiconductor (CMOS) platforms. This capability enables designers to leverage the high-speed and high-breakdown voltage of CS devices where most appropriate, while exploiting the complexity of advanced silicon CMOS for in situ calibration, linearization and signal processing - i.e. the principle of "best junction for the function". Based on this approach, the COSMOS program is specifically developing high-speed, high-linearity mixed-signal designs such as digital-to-analog converters and analog-to-digital converters with revolutionary performance for future military communications, sensing and electronic warfare systems.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2012
- Source ID
- d1e8d48e4376197c37e461296989ec58
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- Root: ELECTRONICS TECHNOLOGY