Leading Edge Access Program (LEAP)
Abstract
Most Integrated Circuit (IC) foundries offering leading edge technology are located outside of the United States. The detrimental effects of this trend are twofold: a lack of access to advanced onshore technology accelerates the migration of highly trained circuit designers from the United States; and DoD is faced with fewer trusted domestic foundries despite becoming increasingly reliant on leading edge semiconductor processes for its most critical systems. Research at advanced semiconductor technology nodes is essential for driving future technology developments in both commercial and DoD application spaces. Thus, the objective of the Leading Edge Access Program (LEAP) is to provide university, industry and Government researchers access to state-of-the-art, onshore complementary metal-oxide semiconductor (CMOS) technology to develop advanced IC concepts relevant to DoD problems. Specifically, LEAP will offer onshore foundry access to CMOS technology nodes of 45 nm and below to increase the number of U.S. designers possessing expertise in leading edge CMOS nodes.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2014
- Source ID
- d234d7ee37b689781cf0771272ca16de
Related Documents
- Root: ELECTRONICS TECHNOLOGY