Ultra-Wide BandGap Semiconductors (UWBGS)*
Abstract
*Formerly Robust Protection for Electronic Systems (ROPES) The Ultra-Wide BandGap Semiconductors (UWBGS) program will develop and optimize ultra-wide bandgap (UWBG) materials and fabrication processes required to enable the next revolution in semiconductor electronics. UWBGS will establish the foundation for the creation of producible and reliable, high performance UWBG devices for a variety of DoD (and commercial) applications. These include, but are not limited to: high power radio frequency (RF) switches; high power density RF amplifiers; high RF power protection device; high voltage switches for power electronics; high temperature electronics and deep ultraviolet light-emitting diodes and lasers. The program will address the key technical challenges that are limiting the performance of UWBG device. These challenges include realizing high quality UWBG materials, ability to tailor electrical characteristics of UWBG materials; ability to create homo- and heterostructures with abrupt junctions and low defect density; and the realization of ultra-low resistance electrical contacts. UWBGS will fabricate device test structures to quantify the improvements in these areas. To be successful, the program will leverage recent advances in UWBG materials.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2025
- Source ID
- dc068934bcf9e36d042d27ccbddc029d
Related Documents
- Root: ELECTRONICS TECHNOLOGY