Diamond Enhanced Devices (DiamEnD)
Abstract
Diamond Enhanced Devices (DiamEnD) will further unlock the potential of Gallium Nitride (GaN) High-electron-mobility transistors (HEMTs) in defense electronics by removing the thermal limitation on performance through replacement of the original substrate with high conductivity (optical quality) diamond. Today, state-of-the-art (SoA) GaN HEMTs used in monolithic microwave integrated circuits (MMICs) reside on moderate thermal conductivity Silicon Carbide (SiC) substrates, which thermally limit the linear power density to between 5 W/mm and 7 W/mm, well below the ultimate limits achieved in pulsed power RF experiments. Through the incorporation of diamond as the substrate and subsequent increase in transistor drain voltage, this linear power density can be boosted to 15-25 W/mm in devices with existing SoA GaN epitaxy layer and as high as 40-60 W/mm with further epitaxial material and transistor development. These DiamEnD devices can then be used to substantially increase output power or reduce system Size, Weight, and Power (SWAP). This increased power density will be the heart of future long range RF engagements, either for smaller systems using the increased power density in a small aperture, or by larger systems which will be able to engage at even longer ranges or faster search speeds.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2016
- Source ID
- f19fcf62c8969ee37953f92eeefa36b3
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- Root: ELECTRONICS TECHNOLOGY