Non-Silicon Electronics
Abstract
The goal of the Non-Silicon Electronics program is to develop a new generation of vacuum electronic devices in which nano-scale structures are integrated with transistors to overcome traditional limitations in reliability and performance. While the commercial electronics world is almost totally dominated by silicon transistors, military systems can benefit enormously from the additional performance enabled by the use of alternate materials. These include phosphides (e.g., InP), antimonides (InSb), and nitrides (GaN). For example, the ability of GaN to achieve very high frequency operation while maintaining low on-state resistance offers an opportunity to achieve compact, even device-scale DC to DC power conversion systems. Such power conversion systems are virtually omnipresent, and by scaling their size by 10X or more while maintaining high efficiency would potentially lead to new capabilities such as chip-scale power converters.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2011
- Source ID
- f39d3c11a7044806e6f8bb3e54c0bce3
Related Documents
- Root: ELECTRONICS TECHNOLOGY