High Frequency Wide Band Gap Semiconductor
Abstract
The High Frequency Wide Band Gap Semiconductor program fully exploited the properties of wide bandgap semiconductors (WBGS) to enhance the capabilities of microwave and millimeter-wave (MMW) monolithic integrated circuits (MMICs) and enable future RF sensor, communication, and multifunction military capabilities. Wide bandgap semiconductors have the ability to deliver very high power and other very favorable high frequency characteristics. Prior efforts have focused on improvements to the basic semiconductor while current efforts are focused on realizing devices and circuits. These technologies led to affordable, high performance, reliable, wide bandgap devices and MMICs with characteristics suitable for enabling new DoD systems and greatly improved performance for fielded platforms. This program was a companion to the effort in PE 0602716E, Project ELT-01.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2012
- Source ID
- fd1055cbdb3fbf094324ba2d745a92d1