SOLID STATE ELECTRONICS
Abstract
The overarching objective of this activity is to develop higher performance components and subsystems for all classes of military RF systems that are based on solid state physics phenomena and are enabled by improved understanding of these phenomena, new circuit design concepts and devices, and improvements in the properties of electronic materials. An important subclass are the very high frequency (VHF), ultra-high frequency (UHF), microwave (MW), and millimeter wave (MMW) power amplifiers for Navy all-weather radar, surveillance, reconnaissance, electronic attack, communications, and smart weapon systems. Another subclass are the analog and high speed, mixed signal components that connect the electromagnetic signal environment into and out of digitally realized, specific function systems. These improved components are based on both silicon (Si) and compound semiconductors (especially the wide bandgap materials and narrow bandgap materials), low and high temperature superconductors, novel nanometer scale structures and materials. Components addressed by this activity emphasize the MMW and submillimeter wave (SMMW) regions with an increasing emphasis on devices capable of operating in the range from 50 gigahertz (GHz) to 10 terahertz (THz). The functionality of the technology developed cannot be obtained through Commercial-Off-the-Shelf (COTS) as a result of the simultaneous requirements placed on power, frequency, linearity, operational and instantaneous bandwidth, weight, and size. Effort will involve understanding the properties of engineered semiconductors as they apply to quantum information science and technology. This activity also includes Anti-Tamper development of innovative techniques and technologies to deter the reverse engineering and exploitation of our military's critical technology and critical program information in order to impede technology transfer and alteration of system capability and prevent the development of countermeasures to U.S. systems. The current specific objectives are: a) Solid State Transistors and Devices: Develop solid state transistors and devices for high frequency analog and digital operation. b) High Efficiency, Highly Linear Amplifiers: Develop high efficiency, highly linear amplifiers for microwave, millimeter-wave, low-noise, and power applications. c) Superconducting Electronics: Develop components for RF systems utilizing superconducting and other technologies which are designed to deliver software defined, wide band, many simultaneous signal functionality over a wide range of frequencies, in increasingly field-ready packaging and demonstrate the ability of these components to be combined into chains to deliver superior functionality in conventional system contexts, including, but not limited to, SATCOM, Electronic Warfare (EW), signal intelligence (SIGINT), and communications. d) Control, Reception, Transmission, and Processing of Signals: Develop electronics and photonics technology that provides for the control, reception, transmission and processing of signals. e) Novel Nanometer Scale Logic/Memory Devices and Related Circuits and Architectures: Develop novel nanometer scale (feature size at or below 10nm) logic/memory devices and related circuits and architectures to deliver ultra-low power, light weight and high performance computational capability for autonomous vehicles and individual warfighters. f) Anti-Tamper: Develope innovative techniques and technologies to deter the reverse engineering and exploitation of our military's critical technology and critical program information in order to impede technology transfer and alteration of system capability and prevent the development of countermeasures to U.S. systems. The increase of funding from FY 2013 to FY 2014 is due to the progression of Anti-Tamper Technology research from Basic to Applied Research. The following are non-inclusive examples of accomplishments and plans for projects funded in this activity.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2014
- Source ID
- ff0afcf8f21592b045458a25dfc7bed7