Ferroelectric Computing (FC)

Abstract

The Ferroelectric Computing (FC) program will develop advanced, complementary metal oxide semiconductor (CMOS)-compatible ferroelectric transistor, compute-in-memory element, and memory compute array technologies for critical data-intensive DoD applications such as radar processing, signal intercept and identification, and image processing. Current compute-in-memory devices are not compatible with advanced CMOS and are too large be scaled to the performance and efficiency levels necessary to support these applications. This program will address this shortfall by developing CMOS-compatible ferroelectric transistor technology for next-generation power-efficient, dense, and scalable compute-in-memory accelerators. Basic research for this program is funded within PE 0601101E, Project ES-02.

Document Details

Document Type
Accomplishment
Publication Date
Oct 01, 2023
Source ID
114e5123975f2cf41bf84c365d2ce62a

Tags

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Military Science and Technology Research and Modernization.

Technology Areas

  • Microelectronics

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