Dynamic Range-enhanced Electronics and Materials (DREaM)
Abstract
The Dynamic Range-enhanced Electronics and Materials (DREaM) program developed intrinsically linear (ideal) radio frequency (RF) transistors with improved power efficiency and extremely high dynamic range. Linearity, power efficiency, and dynamic range are fundamental characteristics that allow RF systems to reliably transmit clear signals. Improving these characteristics is essential to operating in a crowded electromagnetic spectrum environment and to enabling next-generation communication, sensing, and electronic warfare systems. Traditional RF transistor designs typically require a trade-off between linearity and output power, and poor linearity results in undesired interference. DREAM overcame this tradeoff by employing new transistor materials, architectures, and designs. The resulting DREAM-enabled technologies will allow future RF electronics to increase their operating range while consuming less system power, without adding interference to the already-congested electromagnetic spectrum.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2023
- Source ID
- 66b113941a23fb4471e1c91f9942d070
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- Root: ELECTRONICS TECHNOLOGY