RESEARCH ON THE BEHAVIOR OF NEARLY PERFECT CRYSTALS
Abstract
Etching techniques have been developed which are capable of producing etch pits at the intersection of dislocation lines with various crystal surfaces of high-purity single crystals of alpha-iron. For the (100) and (110) surfaces, dislocations can be revealed with or without the segregation of a specific impurity to the dislocation sites. Similar etching reagents can be used to reveal dislocations on the (110), (112) and (491) surfaces as well as all surfaces that make an angle of more than 5 degrees with the (100) and (111) planes. The dislocation structure of selected iron whiskers with (100), (110), and (111) growth axes was evaluated using the above etching techniques. There was some qualitative indication that the perfection of the whiskers increases with decrease in whisker diameter and with increase in purity of the halide salt used in their growth.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1961
- Accession Number
- AD0265522
Entities
People
- Paul D. Gorsuch
- Thomas H. Alden
Organizations
- General Electric