STUDY OF MICROJUNCTION FORMATION TECHNOLOGY

Abstract

An investigation of the experimental method of determining the built- in voltage of abrupt pn junctions by capacitance vs. voltage measurements is given and possible errors are discussed. Preliminary results on the lithographic use of the electron beam for fabricating semiconductor devices are presented. A scaled down plasma torch for semiconductor applications is described. The report closes with a summary and discussion of the electron beam work performed under this contract.

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Document Details

Document Type
Technical Report
Publication Date
Feb 08, 1962
Accession Number
AD0273616

Entities

People

  • A. Ramsa
  • R. Engelmann

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Contracts
  • Diodes
  • Electrical Circuits
  • Electron Guns
  • Electronic Components
  • Electronics
  • Electronics Laboratories
  • Fabrication
  • Frequency
  • Measurement
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • New Jersey
  • P-N Junctions
  • Power Supplies
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics