SEMICONDUCTION IN METAL-DOPED PYRO-POLYMERS

Abstract

The electronic properties of pyrolysis products of Na-, Ca- and Th- doped ion-exchange resins were investigated. The resulting pyro-polymers were degenerate semiconductors whose resistivities decreased from approximately 0.1 to 0.01 ohm-cm as the pyrolysis temperature increased from 800 to 1200 C. Resistivities were altered roughly by a factor of 2 with appropriate doping. The materials exhibit the negative resistivity temperature behavior common to semi-conductors, and have small (.005 to .05 ev) energy gaps. Small, negative (0 to - .05 cc/coul) Hall coefficients were observed. Carrier concentrations are estimated at approximately 1 to 3 x 10 to the 20th power/cc, with mobilities of 1 to 4 sq cm/volt-sec.

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Document Details

Document Type
Technical Report
Publication Date
Jan 15, 1962
Accession Number
AD0273724

Entities

People

  • H. A. Pohl
  • S. L. Rosen

Organizations

  • Princeton University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Ground and Sea Platforms
  • Weapons Technologies

DTIC Thesaurus Topics

  • Air Force
  • Band Theory Of Solids
  • Charge Carriers
  • Chemistry
  • Electrical Properties
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Ion Exchange
  • Ion Exchange Resins
  • Materials
  • Measurement
  • Metals
  • Military Research
  • Mobility
  • Organic Compounds

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene