GROWTH AND MECHANICAL PROPERTIES OF FILAMENTARY SILICON CARBIDE CRYSTALS

Abstract

SiC whiskers were grown under various experimental conditions. The strength and modulus of elasticity of several whiskers were determined at room temperature. Methods of heating the whiskers for high temperature measurements were investigated. The specific gravity of the whiskers was inferred from measurement of the unit cell dimensions by X-ray diffraction patterns. SiC whiskers were grown by pyrolysis of methyltrichlorosilane in hydrogen. In some cases dense growths of whiskers from 1.2 to 1.5 cm in length and from 2 to 5 microns in diameter were observed. The longest whisker obtained was 5 cm in length. The tensile strength ranged from 100,400 to 1,650,000 psi. The elastic strain at failure varied from 0.41 to 1.10 per cent and the observed values of elastic modulus varied from 12,700,000 to 123,300,000 psi. These results indicate that SiC whiskers can be strong, high modulus of elasticity materials.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1962
Accession Number
AD0273997

Entities

People

  • Henry P. Kirchner
  • Luke A. Yerkovich

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Ceramic Materials
  • Composite Materials
  • Compound Semiconductors
  • Corrosion Resistance
  • Crystals
  • Flow Rate
  • High Temperature
  • Materials
  • Materials Laboratories
  • Measurement
  • Mechanical Properties
  • Modulus Of Elasticity
  • New York
  • Silicon Carbide
  • Tensile Properties
  • Tensile Strength

Fields of Study

  • Materials science

Readers

  • Materials Science (Mechanical Engineering).
  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • AI & ML
  • AI & ML - Bayesian Inference