HIGH CURRENT AND HIGH VOLTAGE SILICON CONTROLLED RECTIFIERS

Abstract

Silicon material was received, evaluated and processed through the initial phases of device fabrication. Material evaluation indicates that the silicon approximates the required specifications. Sample fabrication was initiated about one of the device structures. Diffusion results and evaluations are given. A modified capsule design for anticipated improved thermal characteristic is discussed. Design features of both approaches are given. Test fixtures are discussed in view of the extended current rating (500A) compared to conventional devices.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1962
Accession Number
AD0297170

Entities

Organizations

  • Westinghouse Electric Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Assembly
  • Contracts
  • Cooling
  • Diameters
  • Diffusion
  • Encapsulation
  • Fabrication
  • Geometry
  • Heat Sinks
  • Materials
  • Rectifiers
  • Silicon Controlled Rectifiers
  • Specifications
  • Standards
  • Test And Evaluation
  • Test Fixtures
  • Waves

Fields of Study

  • Materials science

Readers

  • Software Engineering
  • Theoretical Analysis.
  • Thin Film Deposition Science.